JESD22 A103 PDF

JESDAE_电子/电路_工程科技_专业资料。JEDEC STANDARD High Temperature Storage Life JESDAE (Revision of. JEDEC STANDARD High Temperature Storage Life JESDAC (Revision of JESDAB) NOVEMBER JEDEC SOLID STATE. JESD A J-STD Preconditioning (PC): PC required for SMDs only. JESD A High Temperature Storage Life (HTSL). °C for hrs.

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JEDEC standards and publications are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. Learn more and apply today. The electrical test measurements shall consist of parametric and functional tests specified in the applicable procurement document. Current search Search found 2 a1103. By downloading this file the individual agrees not to charge for or resell the resulting material.

JESDAC__High_Temperature_Storage_Life_百度文库

High A013 storage test is typically used to determine the effect of time and temperature, under storage conditions, for thermally activated failure mechanisms of solid state electronic devices, including nonvolatile memory devices data retention failure mechanisms.

This test may be destructive, depending on Time, Temperature and Packaging if any. Intermediate measurements are optional unless otherwise specified.

Cosmetic package defects and degradation of lead finish, or solderability are not considered valid failure criteria for this stress. Alternatively, application of a knowledge-based test method that reconciles use condition data JESD94 and an understanding of reliability models and failure mechanisms JEP can provide the test durations for any selected stress condition in Table 1. Some punctuation changes are not included.

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A margin test may be used to detect data retention degradation. JEDEC standards and publications are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. The time window need not be met if verification data for a given technology is provided. This test may be destructive, depending on time, temperature and packaging if any. Interim measurements are optional unless otherwise specified. No claims to be in conformance with this standard may be made unless all requirements stated in the standard are met.

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Modified item C to remove reference of stress duration requirement. All comments will be collected and dispersed to the appropriate committee s.

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Charge loss in A03 memories. Table 1 — High Temperature storage conditions Condition A: The information included in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint.

A margin test may be used to detect data retention degradation. For nonvolatile memories, the data specified data a013 pattern must be written initially, and then subsequently verified without re-writing. Other conditions and durations may be used as appropriate. The high temperature storage test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time-to failure distributions of solid state electronic devices, including nonvolatile memory devices data retention failure mechanisms.

Requirement, clause number Test method number Clause number Fax: The information included in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint.

Other conditions and durations may be used as appropriate.

No claims to be in conformance with this standard may be made unless all requirements stated in the standard are met. I recommend changes to the following: Filter by document type: The devices may be returned to room ambient conditions for interim electrical measurements. The devices may be returned to room ambient conditions or any other defined temperature for interim electrical measurements.

By downloading this file the individual agrees not to charge for or resell the resulting material. Suite Arlington, VA 1. I recommend changes to the following: The electrical test measurements shall consist of parametric and functional tests specified in the applicable procurement document.

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Thermally activated failure mechanisms are modeled using the Arrhenius Equation for acceleration. Jdsd22 State Memories JC If the final readpoint time window is exceeded then the units may be restressed for the same amount of time that the window is exceeded.

Mechanical damage, such as cracking, chipping, or breaking of the package, as defined in JESDB will be considered a failure, provided that such damage was not induced by fixtures or handling and it is critical to the package performance in the specific application. For nonvolatile memories, the specified data retention pattern shall be verified before and after storage.

Search by Keyword or Document Number. Modified text to emphasize that stress duration requirements are stated in qualification jesx22, such as JESD47 or in customer agreements, jessd22 not in this test method. NC-A high-rate and lon This test may be destructive, depending on time, temperature and packaging if any.

Thermally activated failure mechanisms are modeled using the Arrhenius Equation for acceleration. This standard describes a baseline set of acceptance tests for use in qualifying electronic components as new products, a product family, or as products in a process which is being changed.

As a minimum the following items should be taken into consideration: Degradation of metals including metallurgical interfaces. For nonvolatile jesv22, the specified data retention pattern shall be verified before and after storage. The high temperature storage test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time-tofailure distributions of solid state electronic devices, including nonvolatile memory devices data retention failure mechanisms.

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