IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/
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Typical Output Characteristics Fig. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
A, 4Dec 4 Document Number: They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease if9z30 paralleling, and excellent temperature stability.
This device is suitable More information. A, 4Dec 3 Document Number: Bryce Goodman 1 years ago Views: They are also very useful in drive stages because of the circuit versatility irf9s30 by the reverse polarity connection. A Qualified More information. Order code Marking Packages Packaging.
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Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. Absolute Maximum Ratings Parameter Max. This advanced technology More information. Products may be manufactured at one of several qualified locations. Thermal Resistance Symbol Parameter Typ.
IRF9Z30 Datasheet(PDF) – International Rectifier
This device is suitable. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. General Features Figure 1. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein.
A, 4Dec 6 Document Number: N-channel 55 V, 4.
IRF9Z30 Datasheet دیتاشیت PDF دانلود
Pchannel power MOSFETs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification. Description N-channel 60 V, 0. Data Sheet June File Number Start display at page:.
Typical Gate Charge vs. Switching Time Test Circuit Fig. Q g typical nc 27 A. N-channel 60V – 0. High Performance Schottky Rectifier, 1. dataxheet
IRF9Z30, SiHF9Z30 product information
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C Soldering Temperature, for 10 seconds 1. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or igf9z30.
Such statements are not binding statements about the suitability of products for a particular application. R DS on max. Typical Transfer Characteristics Fig. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Maximum Drain Current vs. N-channel 60 V, 0. Order code Marking Package Packing.
IRF9Z30 – (IRF9Z30 / IRF9Z34) P-Channel Power MOSFETs
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