BD Transistor Datasheet pdf, BD Equivalent. Parameters and Characteristics. BD NPN Silicon Power Transistors. Designed for Complementary Use with the BD Series at 25°C Case Temperature 10 A Continuous Collector Current . VCER. Collector-Emitter Voltage (RBE = Ω). BD V. BDA. BDB. BDC. VEBO. Emitter-Base Voltage.
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Npn general purpose transistors, especially suited for use in driver stages of audio amplifiers, low noise input stages of tape recorders, hifi amplifiers, signal processing circuits of television.
This datasheet contains preliminary data, and supplementary data will be published at a later date.
Production processing does notnecessarily include testing of all parameters. July rev 2 19 9 bda bdc npn power transistors features npn transistors applications audio, general purpose switching and amplifier transistors description the devices are manufactured in planar. Specifications may change in any manner without notice.
Bdc complementary silicon plastic power transistors. This datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. Operating and storage junction temperature range tj, tstg 65 to c thermal characteristics characteristic symbol max. Pnp silicon power transistors online from elcodis, view and download bd pdf datasheet, power drivers specifications.
These parameters must be measured using pulse techniques, tp s, gd245 cycle.
NPN SILICON POWER TRANSISTORS
Products conform to specifications in accordancewith the terms of power innovations standard warranty. Preferred devices dayasheet motorola recommended choices for future use and best overall value.
July rev 2 19 9 bda bdc npn power transistors features npn transistors dqtasheet audio, general purpose bx245 and amplifier transistors description the devices are manufactured in planar technology with base island layout. With products that have stood up to some of the most intricate complexities of the automotive, consumer, communications, and industrial markets, bourns is a top resource for innovative, performancedriven components.
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Machine model iiii mm iiiiii c iii v stresses exceeding those listed in the maximum. Trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. Bdf datasheet, equivalent, cross reference search. Bd, bda, bdb, bdc npn silicon power transistors 2 june revised september specifications are subject to change without notice.
These parameters must be measured using voltagesensing contacts, separate from the current carrying contacts.